国家/地区 美国（2）
IPC部
IPC大类
IPC小类
IPC
发明人
公开年 2010（2）
申请年 2008（2）
专利权人 HEWLETTPACKARD DEV CO LP（2）

Semiconductor structure of e.g. transistor, has epitaxial lateral over growth (ELOG) material positioned upon thermally and electrically conductive (TEC) mask and formed of carbon nanostructures and graphene material.

MATHAI S V, THYLEN L H, WANG S

Formation of graphene layer comprises establishing insulating layer on substrate to form seed region and exposing seed material in seed region to carbon-containing precursor gas.

KAMINS T I, QUITORIANO N, WILLIAMS R S