国家/地区 美国（5） 世界知识产权组织（5） 中国（2）
IPC部 B（4） C（4） H（4）
IPC大类 B82（4） C01（4） H01（4）
B32（3） C23（3）
IPC小类 B82Y（4） C01B（4） B32B（3）
C23C（3） H01G（2） H01L（2）
IPC B82Y040/00（4） C01B031/04（4） B82Y030/00（2）
C01B031/02（2） C23C016/56（2） H01G009/00（2）
H01G009/155（2）
发明人 YAGER T A（2）
公开年 2012（4）
申请年 2011（5）
专利权人 EMPIRE TECHNOLOGY DEV LLC（5）

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Graphene integrated energy storage device used in computing device e.g. personal computer, has pseudocapacitance that is formed by surface layer deposition of chemical entity provided on primary electrolyte.

CHEN S, ROTHFUSS C

Graphene-based electronic apparatus e.g. capacitor, comprises primary electrode containing three-dimensional open-cell graphene structure formed by chemical vapor deposition on metal foam substrate.

YAGER T A

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P