国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC B82Y040/00（2） C01B031/04（2）
发明人
公开年 2012（2）
申请年 2011（3）
专利权人

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Buffer layer of epitaxial gallium nitride grapheme structure for light emitting diode, comprises silicon carbide substrate; graphene-containing layer as buffer layer and gallium nitride epitaxial layer; and nitride layer.

LI S, QU S, SHAO H, XU X, WANG C

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X