国家/地区 韩国（4） 美国（2） 世界知识产权组织（2）
IPC部 C（4） H（3） B（2）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3） H01L（2）
IPC C01B031/02（2）
发明人
公开年 2013（4）
申请年 2012（4）
专利权人 KOREA INST SCI TECHNOLOGY（4）

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Producing a graphene to make transparent electrode of e.g. optical detector, comprises depositing catalyst on substrate, heating substrate by vapor deposition of carbon contained in catalyst, cooling heated substrate and etching.

SONG Y W, LIM J A, KANG D S, KIM W J

Metal oxide semiconductor-graphene core-shell quantum dot useful in LED and its fabrication, comprises a structure, where metal oxide semiconductor nanoparticle is a core and the core is covered with graphene in a shell shape.

CHOI W, SON D I, KWON B W, PARK D H, GUK C W, IK S D, UK K B, HUI P D, WON K C, DONG I S, BYOUNG W K, DONG H P

Passive element layer of e.g. display element used in e.g. electric equipment, has main layer that is provided with electromagnetic wave attenuation and heat radiation function at near-field region, and is equipped with graphene layer.

KIM S W, HONG B H, CHOI J, KANG J, HWANG S H, BUNG C J, HUI H B, HWI H S, MO G J, U KIM S, HEE H B