国家/地区 韩国（13） 美国（6）
IPC部 C（10） H（7） B（4）
D（2）
IPC大类 C01（7） H01（6） C08（3）
B01（2） B82（2）
IPC小类 C01B（7） H01L（4） C08K（3）
H01B（3） B01J（2） B82B（2）
B82Y（2） C08G（2）
IPC C01B031/02（7） C08K003/04（3） B01J019/10（2）
B82B003/00（2） B82Y030/00（2） B82Y040/00（2）
C01B031/00（2）
发明人 KIM H S（3） SONG Y W（3） CHOI W K（2）
HONG J（2） HONG J M（2） KIM C K（2）
KU B C（2） LEE S H（2） LIM J A（2）
SONG Y（2）
公开年 2014（9） 2015（4）
申请年 2013（13）
专利权人 KOREA INST SCI TECHNOLOGY（13）

Manufacture of graphene-zinc oxide complex used in manufacture of piezoelectric element, involves dispersing graphene in solvent, seeding by adding zinc oxide precursor, adding e.g. tetramine, and growing zinc oxide on graphene.

KIM S Y, KIM H S, YANG C M, YU J, JUNG Y C, LEE H S

Photoelectrode for photoelectrochemistry cell, has semiconductor layer formed with gallium nitride group alloy, where gallium nitride group alloy is located on surface of substrate, and graphene layer located on semiconductor layer.

HA J S, LEE S H, BAE H J

Producing graphene useful for manufacturing pulse laser resonator of pulse laser, comprises providing a substrate to grow graphene by depositing a metal film on a transparent supporting member, and growing by laser irradiating the substrate.

SONG Y W, PARK J H, DEBNATH P

Conducting compound for flexible electric component, has main portion that is comprised with polymer infiltrated within pore of reduction graphene oxide board structure.

KIM T A, LEE S S, PARK M, KIM H S, PYO J B, LIM S H, SON J G

Producing reduced graphene oxide-coated fiber yarn, comprises e.g. coating graphene oxide on swollen fiber yarn by immersing swollen fiber yarn in polar aprotic solvent dispersed with graphene oxide, and reducing graphene oxide.

SONG K G, HONG S W, RYU J H, PILLAI R S, JUNG J H

Photoluminescence wavelength tunable material, useful in e.g. solar cell and LED, comprises composite comprising metal nanoparticles attached to graphene oxide to vary light emission characteristics of graphene oxide.

KIM J H, JUN S C, OH J Y, LEE S, LEE T, WOO D H, KIM S H, KIM C K, LIM J

Manufacturing single step thin film transistor, comprises preparing ink including graphene oxide or reduced graphene oxide dispersed solution; forming pattern on substrate; and forming semiconductor channel, and source and drain electrodes.

LIM J A, SONG Y W, HONG J M, CHOI W K, EOM D S, SONG Y, HONG J, CHOI W

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Preparing carbon material, preferably graphene using thermal evaporation, comprises depositing liquid polymer/polymer solution onto substrate, stabilizing obtained organic nanofilm and carbonizing stabilized organic nanofilm.

KIM T, JOH H, LEE S H, KIM T W, JOH H I

Preparing polyimide-graphene composite material involves modifying graphene by covalently bonding amine-substituted aromatic/aliphatic compound on graphene surface, adding modified graphene to polyimide precursor to polymerize, and heating.

YOU N H, PARK O, KU B, LEE J H, GOH M, PARK O K, KU B C