国家/地区 韩国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 KIM H J（2） LEE J H（2）
公开年 2015（3）
申请年 2013（3）
专利权人 SAMSUNG ELECTRONICS CO LTD（3）

Graphene device comprises a gate electrode, a source electrode, a drain electrode and a plasmonic pattern that is formed on the gate electrode, where multiple penetration holes are formed in the gate electrode.

KYOUNG J S, JEONG H J, BYUN K E, LEE J H, HEO J S

Graphene device, includes gate electrode layer which is formed on gate insulation layer and third electrode layer formed on second portion of graphene layer.

SEO D, KIM H J, YOO I K, LEE M J, CHO S H, KIM H, YOO I, LEE M, CHO S

Manufacture of single crystal graphene film involves melting catalyst layer on substrate, cooling molten catalyst, forming catalyst region, and expanding catalyst region to expand cooling area of catalyst layer.

HAN I T, KIM H J, KIM S G, KIM Y C, LEE J H, YOO J B