国家/地区 美国（3） 韩国（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3） H01J（3） B01J（2）
B82Y（2） C23C（2） H01L（2）
IPC C01B031/04（3）
发明人
公开年
申请年 2013（3）
专利权人

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A