国家/地区 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2） 日本（2） 韩国（2）
IPC部 C（4）
IPC大类 C01（4） C30（4） C23（2）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人
公开年 2015（2）
申请年 2014（4）
专利权人

Producing single or multi layered graphene-containing carbon structures on a surface of grains of copper powder and/or its alloy comprises e.g. mixing copper or its alloy powder and inert powder, and annealing at a fluidized temperature.

BABUL T, OBUCHOWICZ Z, KOWALSKI S, BLASZCZYK J

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H