国家/地区 中国（5）
IPC部 C（5）
IPC大类 C25（5）
IPC小类 C25D（5）
IPC C25D003/56（5）
发明人 HE Y（3） FAN Y（2） LI H（2）
SHI T（2）
公开年 2015（4）
申请年 2015（5）
专利权人 UNIV SOUTHWE.（2）

Prevention of deposition of reactants and by-products in metal-organic chemical vapor deposition reaction chamber by electrochemically polishing component part, depositing catalytic reaction layer, protecting and depositing graphene layer.

FANG C, JIN K, LIU X, WANG L, YANG C, ZHANG L, ZHANG Y

Method for preparing lead tin-graphene composite material, involves taking sediment from electric conduction base element surface scraping, water washing to neutral and vacuum drying after obtaining lead-graphene composite material.

BAN T, CHEN F, GUO Z, HE Y, ZHANG H

Nickel-tungsten-graphene composite plating solution for preparing plated film, comprises sodium sulfate hexahydrate, sodium tungstate dihydrate, sodium bromide, sodium citrate, ammonium chloride, sodium dodecyl sulfate and graphene.

FAN Y, HE Y, LI H, SHI T, XU W, YANG Q

Preparing copper indium sulfide-graphene composite film material involves adding calcium chloride, indium and sulfur powder to organic solvent containing oxidized graphene to obtain electric deposition solution.

WANG P, YUAN J

Composite plating solution comprises nickel(II) sulfate hexahydrate, sodium tungstate dihydrate, sodium bromide, sodium citrate, ammonium chloride, sodium dodecyl sulfate and graphene oxide.

FAN Y, HE Y, LI H, LUO P, SHI T