国家/地区 日本（3）
IPC部 C（3）
IPC大类 C23（3） C30（3） C01（2）
H01（2）
IPC小类 C23C（3）
IPC C30B025/18（3）
发明人
公开年 2017（2）
申请年 2016（3）
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Composite used for electrode of transistor used in flexible device, consists of single crystal sapphire substrate having dislocation density less than preset value, metal film grown on substrate, and graphene film grown on metal film.

AOTA N, AIDA H

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z