国家/地区 中国（6） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（2） C01B032/19（2）
发明人 XIE X（6）
公开年 2020（3） 2021（2）
申请年 2019（6）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（6）

Preparation of nickel-copper twin-crystal film involves depositing metal film on aluminum oxide crystal surface of sapphire substrate, obtaining front body nickel copper film, heating and annealing.

ZHANG X, WU T, WANG H, YU Q, XIE X

Preparing porous graphene dispersion by electrochemical method, comprises e.g. preparing electrolyte, electrolytically peeling graphite material in electrolyte, and ultrasonically processing obtained graphite intercalation compound.

DING G, DUAN P, HE P, XIE X

Preparing dual-modal contrast agent by dissolving graphene quantum dots in solvent, ultrasonically treating, adding gadolinium inorganic salt, performing solvothermal reaction, performing dialysis and purification and freeze-drying agent.

DONG H, LI Y, YANG S, DING G, XIE X

Preparing silicon based substrate heterogeneous integrated graphene, comprises e.g. providing silicon based substrate, then forming dielectric layer on surface of the silicon based substrate, depositing graphene film and etching.

OU X, YI A, LIN J, ZHANG S, YU Q, XIE X

Co-production method of low-layer graphene and hydrogen involves adding metal-containing catalyst to reaction vessel, heating, passing hydrocarbon gas into molten metal-containing catalyst, collecting solid product and gas and separating.

YU Q, SHI Z, XIE X

Preparing high quality graphene material comprises adding electrolyte solution, graphite raw material and electrode, applying electric field, intercalating of cleavage graphite, washing, removing electrolyte solution and drying.

HE P, DING G, ZHANG P, XIE X