国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C23（3） H01（2）
IPC小类 C01B（3）
IPC C23C016/44（3）
发明人
公开年 2021（3）
申请年 2021（3）
专利权人 UNIV SINGAPO.（2）

Structure e.g. porous metal-coated structure used for e.g. catalytic application, comprises substrate comprising activated adsorbent material, and metal material deposited on substrate.

PEPIN P, ETHRIDGE K, THOMSON C, HOLBROOK B, ESRIDGE K

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A