国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/956（2）
发明人 WEI G（3）
公开年 2022（3）
申请年 2022（3）
专利权人 UNIV SHAANXI.（2）

Preparing silicon carbide (SiC) nanowire array by magnetic field induction method, involves preparing layer of tin metal catalyst on substrate, plating layer of metal nickel (Ni) on surface of SiC nanowire with uniform size distribution to obtain Ni-SiC core-shell structure.

ZENG J, TANG Y, SU Y, WEI G, GUO Y, DING L

Method for preparing silicon carbide nanowire network p-n junction film on copper foil-graphene substrate, involves placing electrode in electrophoresis liquid containing nano-wire with different doping types, and combining electrophoretic deposition.

WEI G, DI P, MA L, DU L, ZANG Y, ZHANG Z, LIU X, NIU X

Preparation of graphene array, by coating boron trioxide on surface of silicon carbide foam, annealing to obtain substrate, pyrolyzing epitaxial graphene on substrate, subjecting to physical gas phase transmission treatment, and peeling off surface of foam with graphene array on surface.

WEI G, LI L, SU Y, ZENG J, DING L