国家/地区 中国（4）
IPC部 C（4） B（2）
IPC大类 B22（2） C22（2）
IPC小类 B22F（2） C22C（2）
IPC B22F003/105（2） C22C001/05（2）
发明人 ZHANG X（4）
公开年 2022（2） 2023（2）
申请年 2022（4）
专利权人 HARBIN INST TECHNOLOGY（4）

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Heat treatment method for improving breaking power of mixing reinforced aluminum-based composite material of graphene and silicon carbide, involves sealing and storing and filling argon gas as protective gas into heat treatment furnace.

GENG L, ZHU X, JIA Z, QIAN M, ZHANG J, ZHANG X

Graphene nanoplatelets/YSZ composite ceramic powder useful for ceramic material used for electronic components of spacecraft, comprises graphene nanoplatelets powder and YSZ powder coated with silica sol.

DENG L, LI G, DU K, HAN X, WANG Y, SUN C, ZHANG X

Preparation method of graphene and silicon carbide hybrid reinforced aluminum matrix composition material, involves mixing nano-silica particles, aluminum powder and process control agent under protection atmosphere, ball milling, adding graphene nanosheets, ball-milling at variable speed.

GENG L, LI J, BAI X, YU J, QIAN M, ZHANG J, ZHANG X