国家/地区 中国（3）
IPC部 B（3） H（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC B82Y010/00（2） B82Y040/00（2）
发明人
公开年 2023（3）
申请年 2023（3）
专利权人

Preparing full two-dimensional short channel field-effect transistor in large-scale comprises e.g. covering spin-coat photoresist to surface of local dielectric layer, and evaporating metal electrode to form contact electrode on source.

YU D, LOU H, CAO Z, LIAO Z

Detection device with broadband photoelectric response, comprises thallium-nickel-selenide nanosheets, which are metal source and drain electrode layers, made by ultraviolet lithography and electron beam evaporation technology, and thallium nickel selenide nanosheet used as photosensitive element.

CHEN X, LI G, ZHANG L, ZHANG S, LIU C, HAN L

Spin field effect transistor used for magnetic logic devices, has semiconductor layer arranged on substrate layer, dielectric layer arranged between source electrode and drain electrode, and gate electrode arranged on dielectric layer.

GU L, WANG X, YU S