国家/地区 中国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L033/00（2）
发明人 LIU C（4）
公开年 2023（4）
申请年 2023（4）
专利权人 JIANGXI MTC .（2）

High electron mobility transistor in semiconductor device, has conductive graphene layer disposed between gate metal and first semiconductor structure, and disposed opposite to gate metal, and/or disposed between second semiconductor structure and second semiconductor layer.

YE N, LIU C, ZHANG H, XU H, YAN D, CHEN D

Detection device with broadband photoelectric response, comprises thallium-nickel-selenide nanosheets, which are metal source and drain electrode layers, made by ultraviolet lithography and electron beam evaporation technology, and thallium nickel selenide nanosheet used as photosensitive element.

CHEN X, LI G, ZHANG L, ZHANG S, LIU C, HAN L

Preparing epitaxial wafer used in LED chip, involves providing substrate, growing aluminum nitride layer on substrate sequentially buffer layer, and introducing hydrogen and nitrogen to perform surface treatment to layer before growing buffer layer.

GU W, JIN C, HU J, LV M, LIU C

Silicon-based UV-LED epitaxial structure, comprises buffer layer provided with silicon dioxide layer, silicon nitride layer, graphene layer, and aluminum nitroxide layer that are sequentially arranged on silicon substrate.

JIN C, HU J, LIU C, GAO H, ZHENG W, CHENG L