国家/地区 美国（4） 台湾（2） 世界知识产权组织（2）
IPC部 H（4） C（3）
IPC大类 H01（4） C23（3） C01（2）
IPC小类 H01L（4） C23C（3） C01B（2）
H01J（2）
IPC C23C016/26（3） C23C016/02（2） C23C016/54（2）
H01J037/32（2） H01L021/02（2） H01L021/285（2）
H01L021/768（2） H01L023/532（2）
发明人
公开年 2022（4）
申请年 2021（2） 
专利权人 APPLIED MATERIALS INC（4）

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Improving graphene deposition involves exposing substrate surface to oxygenating plasma to improve substrate surface quality or deposition parameter, where oxygenating plasma comprises oxygen or water, oxygenating plasma is microwave plasma, remote plasma, conductively coupled plasma.

YIEH E Y, NEMANI S D, YING C C, LIANG Q, CHEN E, ZHOU J

Forming airgap in semiconductor structure is used to produce high quality devices and structures, involves forming high-k material on floor of trench, trench occurs on semiconductor substrate between sidewalls of first material and spacer material, forming gate structure on high-k material.

SACHID A B