国家/地区 韩国（3） 美国（2）
IPC部 C（2） H（2）
IPC大类 C01（2） C23（2） H01（2）
IPC小类 C01B（2） C23C（2） H01L（2）
IPC C01B032/186（2） C23C016/26（2）
发明人 YOO M S（3）
公开年
申请年 2019（2） 
专利权人 CENT ADVANCED SOFT ELECTRONICS（3）

Optical sensor for light detection in wide spectral range, has source and drain electrodes formed on first graphene layer and semiconductor layer, without being electrically connected to barrier layer and first graphene layer, respectively.

CHO K W, LEE H C, YOO M S, CHUNG H J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W