国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人
公开年
申请年 2010（2）
专利权人 CHINESE ACAD SCI PHYSICS INST（2）

Growing graphene on silicon carbide substrate epitaxially involves adopting formation technology imaging substrate, on surface of substrate, forming graphic array, performing thermal decomposition to patterned substrate and forming graphene.

CHEN X, GUO L, JIA Y, LI K, LIN J, WANG G, WANG W

Method of growing graphene directly on substrate involves placing substrate material into plasma-enriched chemical vapor phase deposition cavity, vacuumizing, heating substrate, and supplying carbureted hydrogen gas and other inert gas.

SHI D, ZHANG G, ZHANG L