国家/地区 中国（4）
IPC部 B（2） C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 CHEN X（2） GUO L（2） SHI D（2）
ZHANG G（2） ZHANG L（2）
公开年 2013（3）
申请年 2011（4）
专利权人 CHINESE ACAD SCI PHYSICS INST（4）

Silicon carbide ohmic electrode structure, has silicon carbide substrate made of silicon carbide single crystal or silicon carbide epitaxial layer, and graphene layer forming single layer or multi-layer structure.

CHEN X, GUO L, LIU C

Hetero-epitaxial growth method involves growing graphene on single crystal substrate having crystal lattice by plasma enhanced chemical vapor deposition method.

SHI D, ZHANG G, ZHANG L

Nanocrystalline silicon carbide/graphene heterojunction prepared by coating outer surface of silicon carbide nanoparticle with graphene and then annealing under argon gas atmosphere, useful for photocatalytic degradation of organic matter.

GUO L, CHEN X, LIN J, JIA Y, ZHU K

Graphene nano pattern processing method, involves forming manual defect hole on graphene, performing anisotropic etching on graphene by utilizing hydrogen-containing plasma, and arranging hole in lattice diagram.

ZHANG L, ZHANG G, SHI Z, YANG R, SHI D