国家/地区 中国（4） 世界知识产权组织（2）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2） H01L021/336（2）
发明人 DING G（2） JIANG M（2） LI X（2）
SUN J（2） XIE X（2）
公开年 2013（4）
申请年 2013（4）
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEM（4）

Preparation of graphene powder involves putting graphite to dispersing medium containing oxidizing agent and solution of intercalation agent, uniformly stirring while continuously filling helium gas, and allowing contact of components.

DING G, JIANG M, LI X, SUN J, XIE X, XU C, XU X

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X

Method for preparing liquid grid-type graphene FET, involves depositing aluminum layer on silicon substrate, and spin-coating polyimide photoresist on aluminum layer as substrate of flexible FET.

CHENG J, JIN Q, WU L

Rapid thermal processing method for preparing graphene powder in air atmosphere comprises putting precursor of graphene in non-sealing cover crucible, then carrying out heat treatment to obtain graphene powder.

DING G, JIANG M, LI X, SUN J, XIE X