国家/地区 中国（3）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 CHEN D（3）
公开年 2013（2）
申请年 2012（3） 
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEM（3）

Method for controlling stability of ion based on energy of ion implantation for preparing graphene, involves annealing catalytic substrate to carbon ion implantation, so as to form graphene thin film layer on catalyst substrate surface.

CHEN D, DI Z, DING G, GUO Q, WANG G, XIE X, YE L, ZHANG M

Preparation of graphene involves providing semiconductor substrate, heating under hydrogen and inert atmosphere, adding carbon source to surface of substrate, by chemical vapor deposition method, and cooling.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M, ZHU Y

Graphene preparation includes depositing catalysis metal layer on substrate, implanting carbon ion in catalysis metal layer to form carbon atom saturated plane, and putting substrate in heating vacuum tube.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M