国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年 2011（2）
申请年 2011（3）
专利权人 CHINESE ACAD SCI SHANGHAI MICROSYSTEMS（3）

Method for gradually thinning graphene to obtain graphene nano structure, involves removing top layer of multilayer graphene by anisotropy oxidation process, annealing and processing multi-plasma treatment and high temperature annealing.

DING G, JIANG M, XIE X, YANG X

Graphene imaging method, involves transferring large area graphene film to imaged substrate with groove from solution, and breaking graphene in groove area via surface tension of solution to obtain required imaged graphene.

LI T, WANG W, WANG Y

Graphene base FET preparing method, involves utilizing nucleating layer and water as oxidant to be reacted with hafnium source, and generating hafnium oxide grid medium layer on graphene layer.

CHENG X, HE D, WANG Z, XIA C, XU D, YU Y, ZHANG Y