国家/地区 美国（5） 中国（3） 台湾（3）
IPC部 H（5） B（4） C（2）
IPC大类 H01（5） B82（4） C01（2）
IPC小类 H01L（5） B82Y（3） C01B（2）
IPC H01L033/02（5） H01L033/00（4） B82Y099/00（2）
H01L033/10（2） H01L033/12（2） H01L033/40（2）
发明人 WEI Y（5）
公开年 2013（3） 2014（2）
申请年 2012（3）  2014（2） 
专利权人 FAN S（5）

LED used as light source in optical imaging system such as display, projector has graphene layer having apertures, which is located between active layer and semiconductor layer.

WEI Y, FAN S

LED for use as light source in e.g. projector, has electrode electrically connected with semiconductor layer, and graphene layer located between active layer and semiconductor layer and defining set of apertures.

WEI Y, FAN S

Epitaxial structure comprises an epitaxial layer defining a patterned surface and a graphene layer on the patterned surface of the epitaxial layer.

WEI Y, FAN S

Method for manufacturing epitaxial structure of e.g. LED, involves forming graphene layer on epitaxial growth surface, and epitaxially growing epitaxial layer on epitaxial growth surface.

WEI Y, FAN S, GI Y, FAN F Y

Epitaxial structure used in light emitting device e.g. LED based on group III-V nitride semiconductor e.g. gallium nitride, comprises substrate, epitaxial layer disposed on substrate, and graphene layer disposed between substrate and layer.

WEI Y, FAN S