国家/地区 日本（3）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/02（2） H01L021/336（2） H01L029/417（2）
H01L029/786（2）
发明人
公开年 2012（3）
申请年 2010（3）
专利权人 FUJITSU LTD（3）

Semiconductor device with favorable contact between wiring structure and graphene layer, has gate electrode formed on gate insulating film which is formed on third area between first area and second area of graphene layer.

NIHEI M, SATO M

Formation of graphene sheet-type material for e.g. manufacturing semiconductor integrated circuit device, involves modifying edge portion of graphene sheet by activated electron-donating functional group.

ASANO T, HARADA N

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S