国家/地区 日本（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人
公开年 2008（3）
申请年 2007（2） 
专利权人 FUJITSU LTD（3）

Graphene transistor e.g. FET for high frequencies, has gate electrode that is formed while forming source electrode in one edge, and drain electrode on other edge of insulator.

HIROSE S, IWAI D

Manufacture of surface-modified carbon nanomaterial for electronic component, involves irradiating material having carbon nanotube and graphene with vacuum ultraviolet ray, and supplying substance modifying surface of nanomaterial.

ASANO K

Manufacture of carbon nanotube used as semiconductor, involves supplying carbon raw material to metal catalyst having atomic arrangement of triangular lattice, and depositing graphene sheet of six membered ring structure.

AWANO Y, NARUTSUKA S, KAWABATA A, MARUYAMA T, NARIZUKA S, NARITSUKA S