国家/地区 日本（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/3205（2） H01L021/768（2） H01L023/532（2）
发明人 SATO M（2）
公开年 2015（3）
申请年 2013（3）
专利权人 FUJITSU LTD（3）

Carbon electrically conductive structure used in semiconductor device e.g. semiconductor memory, has first graphene whose edge is electrically connected with edge of second graphene.

SATO M

Manufacturing method of wiring structure for metal oxide semiconductor transistor of e.g. semiconductor memory used in electronic device, involves moving portion on catalyst material and film so as to remain graphene only in groove.

SATO M

Semiconductor device for use as field effect transistor, comprises graphene bilayers, which does not contain the doped impurities, multilayer carbon nanotubes, semiconductor elements and electrodes.

OFUCHI M