国家/地区 韩国（4） 美国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L029/16（2） H01L029/786（2）
发明人 LEE B H（2）
公开年 2017（4）
申请年 2017（4）
专利权人 GWANGJU INST SCI TECHNOLOGY（4）

Non-volatile memory device e.g. NOT-AND (NAND) Flash, has resistance layer including stack of graphene oxide film and iron oxide film, in which resistance value of resistance layer varies based on voltage applied to upper electrode.

JANG J H, ANOOP R, OH S I, RANI A

Formation of metal-graphene hetero-junction metal interconnect for semiconductor device, involves depositing carbon source on substrate, depositing metal catalyst layer on carbon source layer, and heat treating substrate to form graphene.

HAM M, SON M, HAM M H, MYUNGWOO S, XIAN W, SUN M

Graphene photodetector, has drain electrode formed on semiconductor substrate, and gate insulation layer formed on graphene channel, where gate electrode is formed on gate insulation layer, and comprises light transmittance.

LEE B H, CHANG K E, YOO T J, HWANG H J

Graphene transistor for inverter of electronic device, has graphene channel including graphene region opposite to another graphene region based on doped graphene region and formed with Fermi level different from that of doped region.

LEE B H, KIM Y J, KIM S Y