国家/地区 韩国（4） 美国（2）
IPC部 C（5）
IPC大类 C01（4） C23（2）
IPC小类 C01B（4） C23C（2）
IPC C01B031/04（4） C23C016/26（2）
发明人 KIM K S（2） KWON Y D（2） PARK C H（2）
公开年 2016（5）
申请年 2015（3） 
专利权人 HANWHA TECHWIN CO LTD（5）

Chamber for synthesizing graphene at high-temperature/high-vacuum environment, has auxiliary heater placed between substrate and main heater and for heating auxiliary space between substrate and auxiliary heater for synthesizing graphene.

WON D, NAM W

Graphene manufacturing device has base material that is dipped in miscible fluid of etchant and from which metal substrate is removed by metal substrate removing unit and graphene layer is removed.

KWON Y D, KIM K S

Transfer of graphene used in e.g. transparent display, involves providing catalytic metal layer on graphene provided on carrier, removing carrier such that graphene is placed facing target substrate, and plasma processing.

PARK J S, YOON J H

Manufacturing graphene, comprises preparing support member, disposing carbon layer and catalyst layer, forming graphene, attaching carrier to graphene and forming graphene-forming structure, separating member and removing catalyst layer.

PARK C, CHO S, PARK C H, CHO S M

Graphene manufacturing device has driving unit which is connected to jig and contacted with transfer film of jig for rolling jig, and graphene layer that is placed in metal substrate.

KWON Y D, KIM K S, PARK C H