国家/地区 中国（4）
IPC部 C（3）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B029/02（2）
发明人 LIANG S（4）
公开年 2013（2） 2023（2）
申请年 2013（2）  2022（2） 
专利权人 HARBIN INST TECHNOLOGY（4）

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

High resolution graphene heterogeneity pressure sensor for use in air pressure detecting device in aerospace, has lower electric insulating layer provided with sealing layer, pressure-bearing membrane utilizing boron nitride/graphene film, and substrate adopting micro-nano-array cavity structure.

GUO P, HE X, WU B, LIANG S, LI S, ZHANG J

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L

Preparing low-temperature coordination assembling-synthesizing graphene comprises e.g. adding metal substrate in plasma-enhanced chemical vapor deposition device, vacuumizing, introducing e.g. argon gas, depositing, and growing graphene.

CAO J, FENG J, LIANG S, QI J, ZHANG L