国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人
公开年 2013（3）
申请年 2011（3）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（3）

Manufacture of graphene involves adding powdery graphite into mixed solvent, ultrasonically treating, centrifuging and removing supernatant.

XIE J, ZHANG Y, LI C, LUO W, XIA Y

Manufacturing method for graphene device, involves providing substrate, where substrate comprises insulating layer and semiconductor layer, forming source/drain contact plug on back gate electrode.

ZHU H, LIU X, ZHONG H, LIANG Q, JIN Z

Diamond-like semiconductor substrate source/drain buried type graphene transistor device for small size and high frequency integrated circuit, has insulating medium layer arranged on upper part of metal gate electrode.

MA X, YIN H