国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC
发明人 PENG S（3）
公开年 2015（3）
申请年 2014（3） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（3）

Atomic-level mechanical peeling cleaning of graphene surface used for field effect transistor or electric conduction film by taking target substrate, adhering graphene, soaking in organic solvent, and dissolving graphene surface.

JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J

Graphene metal contact removing method, involves coating spin in optical resist layer, forming metal electrode with image in inorganic layer surface, and providing graphene-metal contact area with inorganic layer.

JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J

Graphene field effect transistor preparing method, involves providing semiconductor substrate surface with graphene surface, providing spin with organic or inorganic metal protection layer, and providing metal electrode with optical image.

JIN Z, PENG S, WANG X, ZHANG D, WANG S, SHI J