国家/地区 中国（3） 美国（2） 世界知识产权组织（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/78（3） H01L021/336（2） H01L029/06（2）
发明人 ZHU H（3）
公开年 2012（3）
申请年 2011（3） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（3）

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Method for manufacturing semiconductor device, involves forming graphene layer on insulating layer, forming gate structure on graphene layer, and forming doped region in semiconductor substrate.

LUO Z, YIN H, ZHU H

Graphene device structure for use in complementary metal oxide semiconductor device, has semiconductor doped region and graphene layer that are formed as drain region and source region of device structure respectively.

LIANG Q, JIN Z, WANG W, ZHONG H, LIU X, ZHU H, YE T