国家/地区 中国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC
发明人 DONG H（2） HE Q（2） LIU M（2）
LONG S（2） QIN Y（2）
公开年 2018（4）
申请年 2018（3） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（4）

Gallium oxide-based UV detector, has graphene layer formed on surface of gallium crystal substrate, and ohmic contact electrode formed in graphene layer without contact with surface of gallium oxide crystal substrate.

LONG S, QIN Y, DONG H, HE Q, LIU M

Gallium oxide-based UV detector used in space astronomical telescopes, has graphene layer which is grown on surface of H-type boron nitride that is not in contact with gallium oxide crystal substrate.

LONG S, QIN Y, DONG H, HE Q, LIU M

Aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) with graphene heat dissipation layer has aluminum gallium nitride barrier layer which is formed on gallium nitride channel layer.

ZHAO M, LIU H, ZHANG G, WU Z, SUN B, HUANG K

Gallium arsenide solar battery for solar photovoltaic power generation, has graphene layer and metal electrode that are connected to form composite front electrode, and back electrode that is formed on back surface of epitaxial structure.

JIA R, SUN H, TAO K, JIANG S