国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（2） C23（2） H01（2）
IPC小类 C01B（2） C23C（2）
IPC
发明人 WANG H（3） JIANG C（2） WANG W（2）
XIAO X（2）
公开年 2022（2）
申请年
专利权人 JIANGSU YUNYONG ELECTRONICS TECHNOLOGY（3）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparation of hexagonal boron nitride surface torsion double-graphite alkene involves introducing reaction gas and catalytic gas into chemical vapor growth chamber at second preset temperature.

WANG W, XIAO X, JIANG C, WANG H