国家/地区 美国（15）
IPC部 B（11） C（11） H（9）
G（2）
IPC大类 B82（10） C01（9） H01（9）
C23（5） B01（3） B05（3）
B32（3）
IPC小类 B82Y（9） C01B（9） H01B（6）
H01L（6） C23C（5） B82B（4）
B05D（3） B32B（3） B01J（2）
IPC C01B031/02（7） B82Y030/00（6） B82Y040/00（5）
C01B031/04（5） H01B001/04（5） B82B003/00（4）
C23C016/26（4） H01L029/78（4） B82Y099/00（3）
H01L021/336（3） B01J019/12（2） B05D005/12（2）
B32B005/16（2） B32B009/00（2） H01B001/20（2）
发明人 CHO B J（4） KIM S O（3） HAN T H（2）
HONG S（2） HWANG J（2） JEON S（2）
KIM H（2） KIM J E（2） LEE D H（2）
LEE K J（2） MUN J H（2）
公开年 2012（6） 2011（5） 2013（3）
申请年 2012（6）  2010（4）  2011（4） 
专利权人 KOREA ADV INST SCI TECHNOLOGY（15）

Visualizing optical domains of graphene, by forming graphene layer, forming liquid crystal layer on graphene layer, and measuring optical properties of formed liquid crystal layer to visualize domains and domain boundaries of graphene.

JUNG H T, KIM Y H, KIM D W, JEONG H S

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J

Graphene-ceramic nanocomposite powder for electronic device, nozzle of ignition system, substrate, condenser, sensor and integrated circuit, contains matrix ceramics and graphene dispersed in matrix ceramics.

HONG S, KOO M Y, HWANG J, LEE B

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Floating gate- or charge trap-type non-volatile memory device includes gate electrode made of graphene.

CHO B J, PARK J K

Manufacture of graphene used for e.g. touch screen, involves forming transition metal catalyst layer on substrate, supplying carbon source vapor to chamber and segregating graphene from carbon component in catalyst-layer surface.

JEON S, LEE J, OH S

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Graphene/metal nanocomposite powder used in nanocomposite material comprises graphenes acting as reinforcing material for base metal, where graphenes are interposed as thin film between metal particles of base metal and bonded to particles.

HONG S H, HWANG J W, LIM B K, JIN S H, HWANG J, HONG S, SEONG J, HONG C, LIM B