国家/地区 韩国（3）
IPC部 H（3） C（2）
IPC大类 H01（3） C23（2）
IPC小类 C23C（2） H01L（2）
IPC
发明人 MUN J H（3）
公开年 2014（2）
申请年 2013（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（3）

Graphene layer formation method involves subjecting board comprising of stack of layers to high pressure annealing in vacuum atmosphere or inert gas atmosphere.

CHO B J, MUN J H

Board for forming graphene layer, comprises board layer; metal catalyst layer disposed on the board layer and functioning as a catalyst for forming the graphene layer; and stress reduction layer to reduce stress of the metal catalyst layer.

CHO B J, MUN J H

Graphene device comprises a source and a drain, formed on a substrate, a graphene channel formed on the substrate between the source and the drain, and a gate formed on a dielectric layer on the graphene channel.

CHO B J, MUN J H