国家/地区 韩国（21） 世界知识产权组织（6） 美国（2）
IPC部 C（21）
IPC大类 C01（20） B01（13） H01（6）
C23（5） B82（3） G01（2）
IPC小类 C01B（20） B01J（11） C23C（5）
H01L（4） B01D（3） B82B（3）
H01B（3） B82Y（2） G01N（2）
IPC C01B031/02（20） C01B031/04（4） B01J019/10（3）
B01J019/12（3） B82B003/00（3） C23C016/26（3）
B01J019/08（2） B82Y040/00（2） C23C016/06（2）
H01B001/04（2）
发明人 CHOI K C（3） HONG S（3） JEON S（3）
KONG B S（3） LEE B（3） SONG S H（3）
AHN S I（2） BYUNG J C（2） CHOI I S（2）
FEI L（2） HO S S（2） KIM K J（2）
KIM S O（2） LEE H（2） LEE K J（2）
公开年 2013（21）
申请年 2011（10）  2012（10） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（21）

Manufacture of graphene involves preparing expanded graphene, mixing with metal ion hydrate, heating expanded graphite such that metal ion is inserted in interlayer of expanded graphene, and removing inserted metal ion from interlayer.

HUR S H, JEON S, KONG B S, SONG S H

Transferring graphene on substrate e.g. metal substrate, involves forming solvent layers containing polar and non polar solvent or amphiphilic solvent, and dispersing graphite intercalation compound on top of solvent layers.

JEON S, KIM B H, KONG B S, PARK K H, SONG S H

Organic light-emitting device has anode electrode, organic layer, graphene layer and graphene support layer supporting graphene layer, such that graphene layer is upwardly transferred to glass substrate and cathode electrode.

CHOI K C, HAN Y C

Graphene film, useful in a LCD element and electronic paper display device, comprises self-assembled monolayer formed on substrate, and graphene oxide thin films formed on self-assembled monolayer.

HWANG J O, KIM S O

Device, useful for producing graphene for transistor, comprises chamber with space for processing substrate, substrate support, gas supply, light source, focusing unit, and unit for transferring formed graphene layer on substrate.

BYOUNG W J, BYUNG J C, SEOK W J

Producing graphene used for e.g. electrical and electronic device, comprises dispersing graphite into quinoline to form graphene dispersed solution, centrifuging dispersed solution, and extracting graphene from upper layer of solution.

HO S S, JEON S

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S

Graphene oxide used in manufacture of electric component, has two-dimensional structure, and epoxy group is formed in edge circumference region, where epoxy group deformity with carbon double bond is in specific range.

AHN S I, CHOI K C, KIM K J

Method of isolating graphene oxide for forming oxidized graphene powder, involves forming graphene oxide dispersed liquid by dispersing graphene oxides in water, and depositing dispersed graphene oxides in dispersed liquid.

HONG S, LEE B, LEE H, RYU S, HYUNG H S, SEONGWOO R

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S