国家/地区 韩国（3） 美国（2）
IPC部 C（3） H（2）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（3） C01B031/02（2）
发明人 JEON S W（3）
公开年 2015（3）
申请年 2014（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（3）

Producing graphene, comprises e.g. heating metal wire located on substrate into a chamber to form gaseous metal catalyst, injecting a carbon source gas into the chamber, and heating first portion of substrate using heated metal wire.

BAEK J W, JEON S W, LEE J S

Fabrication of graphene quantum dots used in e.g. electronic product, involves heating mixture of graphite powders with metallic hydrate salt to form intercalation compound by inserting metal ions, and redispersing in solvent.

JEON S, KIM B, SONG S, JEON S W, KIM B H, SONG S H

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S