国家/地区 韩国（4）
IPC部 C（4） H（3） B（2）
IPC大类 C01（4） H01（3）
IPC小类 C01B（4） H01L（2）
IPC C01B031/04（3） C01B031/02（2）
发明人 JEON S（2） JEON S W（2）
公开年 2015（4）
申请年 2014（3） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（4）

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Graphene hydrogel for preparing graphene hydrogel nanocomposite material and article e.g. energy storage device, comprises pores between laminated graphene sheets.

KIM S O, MAITI U N, LIM J W, LIM J, NARAYAN M U

Fabrication of graphene quantum dots used in e.g. electronic product, involves heating mixture of graphite powders with metallic hydrate salt to form intercalation compound by inserting metal ions, and redispersing in solvent.

JEON S, KIM B, SONG S, JEON S W, KIM B H, SONG S H

Formation of graphene layer on substrate used for semiconductor device, involves forming carbon source layer and metal catalyst layer on substrate, converting carbon source layer into graphene layer and removing metal catalyst layer.

BAEK J, JEON S, LEE J, BAEK J W, JEON S W, LEE J S