国家/地区 韩国（6）
IPC部 C（6） H（2）
IPC大类 C01（4） C25（2） H01（2）
IPC小类 C01B（4） C25D（2）
IPC C01B031/04（2） C01B032/182（2）
发明人 LEE D S（6）
公开年 2016（3） 2018（2）
申请年 2015（4） 
专利权人 KOREA INST SCI TECHNOLOGY（6）

Manufacture of graphene thin film involves depositing metal catalyst on mold including substrate having graphene layer, forming graphene thin film on metal catalyst layer by chemical vapor deposition, and removing catalyst layer from mold.

LEE S H, BAE S, RHO H K, KIM T W, LEE S K, LEE D S

Producing graphene fiber composite useful in electronic device and electric wire, comprises e.g. performing chemical vapor deposition process to synthesize graphene layer on metal catalyst, and etching metal catalyst from graphene layer.

BAE S, KIM S J, RHO H K, LEE S K, KIM T W, LEE D S, LEE S H

Three dimensional materials quantum dots useful as metal ion and polymer stripping material, comprises a graphene-doped quantum, boron nitride-doped quantum dots, and inorganic chalcogenide-doped quantum dots containing heteroatom.

JO H I, KANG G S, LEE C H, LEE S H, JO S M, LEE D S, MOON B J

Cathode roll for manufacturing electroplated thin film, comprises graphene layer formed on cylindrical mold and pattern generating unit formed on the graphene layer, where the pattern generating unit has fine pattern.

LEE S H, RHO H K, BAE S, KIM T W, LEE D S

Non-volatile memory device consists of substrate, lower electrode, active layer containing metal oxide-graphene quantum dots and organic polymer material, and upper electrode, in order.

KIM T W, SON D I, BAE S, LEE S H, MOON B J, LEE D S, PARK M

Producing graphene by continuous roll-to-roll method, comprises e.g. sealing a reaction chamber using liquid phase precursor having carbon and carbon source to partitioning internal and external environments, and supplying metal catalyst.

KIM M J, CHO H J, LEE D S