国家/地区 韩国（4） 美国（3） 中国（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/16（3） H01L021/336（2） H01L029/06（2）
H01L029/165（2） H01L029/66（2） H01L029/78（2）
发明人 LEE M（4） LEE J（2） LEE J H（2）
LEE M H（2） LI M（2） SHIN H（2）
SHIN H J（2） YOO I（2） YOO I K（2）
公开年 2015（3）
申请年 2014（2） 
专利权人 LEE M（4）

Producing graphene hydrogen storage container, comprises producing container having a specific shape with a selected material, and installing upper pipe and lower pipe) in upper- and lower connection portion of the container.

LEE M

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Graphene device, includes gate electrode layer which is formed on gate insulation layer and third electrode layer formed on second portion of graphene layer.

SEO D, KIM H J, YOO I K, LEE M J, CHO S H, KIM H, YOO I, LEE M, CHO S