国家/地区 欧洲专利局（EPO）（4）
IPC部 C（4）
IPC大类 C01（4） H01（3） B01（2）
B82（2）
IPC小类 C01B（4）
IPC C01B031/04（4） C01B032/194（3） B82Y040/00（2）
C01B031/00（2） C01B031/02（2） C01B032/20（2）
H01L029/16（2） H01L051/00（2）
发明人 MOON J（3） BYUN N（2） JUNG M（2）
PARK W（2） SEO B（2）
公开年 2013（2）
申请年 2013（2） 
专利权人 LG ELECTRONICS INC（4）

Preparation of multi-doped graphene involves mixing metal-based dopant and at least one organic-based dopant to prepare doping solution, stacking graphene layer on substrate, and doping graphene layer with doping solution.

JUNG M, BYUN N, MOON J, MYNGHEE J, NAMI B, JINSAN M, WEN Z

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Making graphene powder useful in carbon-based electrical devices involves preparing graphene solution in which graphene particles are dispersed in a solvent; aggregating the particles; separating aggregated particles from solvent and drying.

LEE S, LEE D, SEO B, BYUN N

Manufacturing graphene used e.g. as base material for electronic circuits, by attaching support layer on graphene layer, removing catalyst metal layer, disposing substrate on graphene layer, and separating support layer from graphene layer.

MOON J, PARK W, JUNG M, RHO J, SEO B