国家/地区 世界知识产权组织（3） 美国（2）
IPC部 B（2） C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC
发明人 KIM J（2） KONG W（2） SWAGER T M（2）
公开年 2019（2） 2020（2）
申请年 2019（4）
专利权人 MASSACHUSETTS INST TECHNOLOGY（4）

Synthesing graphene molecules comprises e.g. intercalating second species between first and second adjacent graphene sheets having exposing first and second sheets to first species to facilitates electrochemical intercalation of species.

SWAGER T M, ZHONG Y L

Manufacture of semiconductor device for electronic device, involves forming carbon buffer layer on substrate, and graphene layer on buffer layer, removing graphene layer, exposing carbon buffer layer, and forming fabrication platform.

KIM J, KONG W

Method for growing silicon carbide layer used in electronic/photonic device, involves forming silicon carbide film on layer comprising graphene and/or hexagonal boron nitride, formed on substrate, in presence of inert gas-based material.

MYERSWARD R L, KIM J, QIAO K, KONG W, GASKILL D K, MAEKAWA T, MASAGO N

Composition comprises discrete nanostructures of functionalized graphene layer and core species bound to the graphene layer and core species reversibly covalently binds first portion of the layer to a second portion of the graphene layer.

HUNTER I W, SWAGER T M, JEON I, PARK G H, WANG P