国家/地区 中国（5）
IPC部 H（4） C（3） B（2）
IPC大类 H01（4） C01（2）
IPC小类 H01L（4） C01B（2）
IPC H01L021/02（2） H01L029/16（2） H01L051/00（2）
H01L051/44（2）
发明人 KIM J（2） KONG J（2）
公开年 2017（3）
申请年 2017（3） 
专利权人 MASSACHUSETTS INST TECHNOLOGY（5）

Method for manufacturing semiconductor device, involves forming graphene layer on first epitaxial layer, and forming second epitaxial layer comprising predetermined semiconductor material on graphene layer.

KIM J, LEE K

Membrane used in filter media, comprises preset amount of crosslinked graphene oxide sheets with preset thickness.

DAVE S H, GROSSMAN J C, HAN G D, KELLER B

Method for transferring nano-film i.e. graphene, to fabricate transparent electrode, involves forming transfer stamp on transparent polymeric substrate, and applying nano-film layer of transfer stamp to surface of target substrate.

SONG Y, HONG J, KONG J

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Transparent electrode for device comprises graphene sheet on substrate, interlayer consisting of conductive polymer disposed over the graphene sheet, and semiconducting nanowires disposed over the interlayer.

PARK H, CHANG S, KONG J, GRADECAK S, GRADEAOEAK S, ZHANG S