国家/地区 中国（5）
IPC部 H（6）
IPC大类 H01（6）
IPC小类 H01L（4） H01G（2）
IPC H01G011/24（2） H01G011/86（2）
发明人
公开年 2015（6）
申请年 2014（6）
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（6）

Method for manufacturing unipolar graphene transistor, involves applying electric field of which electric field intensity is changed along connection direction of source and drain to graphene layer on substrate.

QIU X, WANG X, CHENG Z

Porous graphene-manganese-di oxide composite thin film preparation method, involves annealing carbon film coating to obtain reducing graphene-calcium carbon composite thin film to obtain hydrochloric acid react.

CHU W, LIU Y, LI X, ZHAO X, ZHAO Y

Asymmetric bilayer graphene used for electronic device, comprises bilayer graphene monolayers doped with two different chemical elements.

GONG J, GUO B

Full-carbon graphene device, has source electrode and drain electrode, which are connected with continuous integrated film, and base layer formed as supporting layer and located below graphene composite thin film.

FANG Y, LI H, YANG L

Electro-thermal pump type actuator, has carbon nano tube made of carbon nano material that is mixed with graphene oxide.

LIU L, LIU Q, ZHANG Z

Method for preparing grapheme-based composite thin film for use as electrode material, involves taking bacteria, manganese ion and sodium ion solution, stirring and washing, followed by dispersing in graphene oxide, drying and annealing.

JIANG P, GUO W