国家/地区 日本（4） 美国（2）
IPC部 C（3） H（3） B（2）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3） H01L（2）
IPC C01B031/02（3） C01B032/182（3） C01B032/15（2）
C01B032/18（2） H01L021/28（2）
发明人
公开年 2015（4）
申请年 2014（3） 
专利权人 NAT INST ADVANCED IND SCI TECHNOLOGY（4）

Semiconductor device e.g. graphene transistor has first and second boron carbon nitride (BCN) layers that are inserted between graphenes.

HARADA N

Graphene film in which many ribbon-shaped graphenes having a longitudinal edge structure of an arm chair type constitute a network structure used for manufacturing electronic device and top gate top contact thin film transistor.

YAMAGUCHI J, SATO S

Manufacturing method of graphene laminated body, involves processing graphene film with fine adhesive sheet and doping solution which does not react chemically, after temporarily fixing graphene film on fine adhesive sheet.

ISHIHARA M

Carbon-type solid acid used in solid acid catalyst, comprises carbonaceous material having sulfonic acid group, and has graphene structure in at least portion and contains boron.

SHIOYAMA H, SAKURAI H, XU Q, KIUCHI M, KIMURA Y, MU C