国家/地区 韩国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3） H01B（2）
IPC H01B001/04（2） H01B005/14（2） H01L031/0224（2）
H01L051/00（2） H01L051/52（2）
发明人 HAN T H（3）
公开年
申请年 2016（2） 
专利权人 POSTECH ACADIND FOUND（3）

Fluorinated polymeric acid-doped graphene electrode used as indium-tin oxide for display device and flexible and transparent electrode material, comprises graphene electrode formed on substrate and dopant layer formed on graphene electrode.

LEE T W, HAN T H, KWON S J

Doped graphene electrode comprises graphene electrode formed on substrate, and dopant layer formed on graphene electrode, where dopant layer is fluorinated acid dopant layer, and has improved considerable level and reduced energy barrier.

LEE T W, HAN T H, KWON S J

Electrode, useful in electronic device e.g. organic light-emitting device, organic solar cell or organic memory device, comprises graphene-containing layer, and layer having work function gradient formed on graphene-containing layer.

LEE T, HAN T, AHN J, LEE Y, WOO S, LEE T W, HAN T H, AHN J H, YI Y B, LEE Y B, WOO S H, LI R