国家/地区 韩国（5）
IPC部 C（5） H（3）
IPC大类 C01（5） H01（3）
IPC小类 C01B（5） H01L（3）
IPC C01B031/04（5）
发明人 JIN W C（2） SI J S（2）
公开年 2016（5）
申请年 2014（3） 
专利权人 POSTECH ACADIND FOUND（5）

Graphene laminate used in electrode for electronic device chosen from e.g. organic thin-film transistor and organic solar cell, comprises graphene layer comprising electron-donating functional group, and another graphene layer.

CHO K, KIM H, KANG B S, GANG B, KANG B

Band gap-maintaining graphene comprises graphene and cesium ions absorbed on graphene.

JIN W C, SI J S

Graphene with band gap, comprises graphene and alkali metal ion, and has controlled size.

JIN W C, SI J S

Manufacturing method of silicon carbide semiconductor device, involves forming protective layer on silicon carbide substrate into graphene, activating impurity, and removing protective layer.

KYEONG K C

New 2,2'-bipyridine-containing metallic complexes useful in graphene-metal complex composite for electronic device, preferably field-effect transistor, light detecting device, capacitor, battery, solar cell and light-emitting diode.

OH J H, LEE E K, LIU X