国家/地区 韩国（5）
IPC部 C（4） H（4） B（2）
IPC大类 H01（4） C01（2） C23（2）
IPC小类 H01L（4） C01B（2） C23C（2）
IPC H01L021/02（3） C23C016/26（2） H01L021/324（2）
H01L029/16（2） H01L051/00（2）
发明人 CHO K W（3） LEE E（2）
公开年 2020（5）
申请年 2019（3）  2018（2） 
专利权人 POSTECH ACADIND FOUND（5）

Graphene laminate used for organic electronic device, comprises flexible substrate, metal oxide layer formed on flexible substrate, interfacial adhesion layer formed on metal oxide layer, and graphene formed on interfacial adhesive layer.

CHO K W, LEE E

Graphene used for organic electronic device, laminate comprises substrate, semiconductor layer comprising chalcogen compound, interfacial adhesion layer, and electrode formed on interfacial adhesive layer and comprising graphene.

CHO K W, LEE E

Producing graphene comprises providing cellulose substrate containing sodium ions, and forming graphene by irradiating laser into cellulose substrate.

MIN J, LEE S

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Method for manufacturing semiconductor device i.e. silicon carbide MOSFET, involves depositing graphene oxide dispersion on dopant implanted semiconductor substrate, and removing deposited graphene oxide dispersion.

KIMSEONGJUN, SHIN H K, KIM H, KANG M J, SUNG M J, LEE N S